Transistor superregenerative detection

Summary form only given. This paper presents the result of a theoretical and experimental study of the principle. and mechanism of superregenerative detections using junction transistors. The analysis of superregenerative detection is based on the study oE a transistor oscillator, the criterion of oscillation. the build-up and the decay of oscillation. Due to the dependence of transistor parameters on the operating point, the loop gain of a transistor osallator can be controlled by changing the emitter current (Ie) and/or the collector voltage. (Vc) . This property makes the control of a transistor oscillator by an external quench signal possible. Either the linear mode or the logarithmic mode of detection can be obtained. Self-quenched superregenerative detection also can be obtained. The circuit design and the bias of the transistor have to be such that the initial emitter current (Ie) is small but the loop gain of the oscillator is enough to start the oscillation. Then the bias point of the transistor should be able to change corresponding to the amplitude of oscillation. Typical properties of a superregenerative detector, such as high gain and noise, which are similar to the tube circuit are also present in the transistor circuit.