DocumentCode
331986
Title
High quality and thick GaN substrate epitaxially grown by VPE lateral overgrowth
Author
Usui, Akira
Author_Institution
Optoelectron. & High Frequency Device Res. Labs., NEC Corp., Ibaraki, Japan
Volume
1
fYear
1998
fDate
1-4 Dec 1998
Firstpage
362
Abstract
We have developed the epitaxial lateral overgrowth (ELO) technique for growing high-quality bulk GaN by using hybrid vapour phase epitaxial growth (HVPE). A remarkable reduction of dislocation density was achieved. The preparation of free-standing GaN wafers was demonstrated
Keywords
III-V semiconductors; dislocation density; gallium compounds; optical films; vapour phase epitaxial growth; GaN; VPE lateral overgrowth; dislocation density; epitaxial lateral overgrowth; epitaxially grown; free-standing GaN wafers; high-quality bulk GaN; hybrid vapour phase epitaxial growth; thick GaN substrate; Crystalline materials; Diode lasers; Etching; Frequency; Gallium nitride; III-V semiconductor materials; Light emitting diodes; National electric code; Optical materials; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location
Orlando, FL
Print_ISBN
0-7803-4947-4
Type
conf
DOI
10.1109/LEOS.1998.737880
Filename
737880
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