Residual donors in undoped LEC InP

Author

Zhao, Y.W. ; Sun, N.F. ; Sun, T.N. ; Lin, Lanying ; Wu, Xiawan ; Guo, Weilian ; Wu, Xiang ; Bi, Keyun

fYear

2000

fDate

2000

Firstpage

179

Lastpage

182

Abstract

Undoped liquid encapsulated Czochralski (LEC) InP samples have been studied by Hall effect, glow discharge mass spectroscopy (GDMS) and infrared absorption spectroscopy. A systematic discrepancy has been found between the Hall electron concentration and net donor concentration measured by GDMS. The electron concentration is always higher than the net shallow donor concentration by about (3-6)×10 ¹⁵ cm^-3. A hydrogen indium vacancy complex donor defect V_InH₄ was detected regularly by infrared absorption spectroscopy in all undoped LEC InP samples. The fact can be explained by taking into account the existence of the donor defect in as-grown undoped LEC-InP

Keywords

Hall effect; III-V semiconductors; defect absorption spectra; doping profiles; electron density; indium compounds; infrared spectra; vacancies (crystal); GDMS; Hall effect; Hall electron concentration; InP; donor defect; glow discharge mass spectroscopy; hydrogen indium vacancy complex donor defect; infrared absorption spectroscopy; residual donors; shallow donor concentration; undoped LEC InP; undoped liquid encapsulated Czochralski InP; Electromagnetic wave absorption; Electrons; Glow discharges; Hall effect; Impurities; Indium phosphide; Infrared detectors; Infrared spectra; Mass spectroscopy; Raw materials;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-5814-7

Type

conf

DOI

10.1109/SIM.2000.939222

Filename

939222