Title :
Self-assembled InAs quantum wires on InP(001)
Author :
Wu, J. ; Zeng, Y.P. ; Sun, Z.Z. ; Lin, E. ; Xu, B. ; Wang, Z.G.
Author_Institution :
Lab. of Semicond. Mater. Sci., Acad. Sinica, Beijing, China
Abstract :
Self-assembled InAs quantum wires (QWRs) embedded in In0.52 Al0.48As, In0.53Ga0.47As, and (In 0.52Al0.48As)2/(In0.53Ga 0.47As)2-short -period-lattice matrices on InP (001) were fabricated with molecular beam epitaxy (MBE). These QWR lines are along [110], ×4 direction in the 2×4 reconstructed (001) surface as revealed with high energy electron diffraction (RHEED). Alignment of quantum wires in a multilayer structure depends on the composition of spacer layers
Keywords :
III-V semiconductors; indium compounds; interface structure; molecular beam epitaxial growth; reflection high energy electron diffraction; self-assembly; semiconductor growth; semiconductor quantum wires; semiconductor superlattices; surface reconstruction; (In0.52Al0.48As)/(In0.53Ga 0.47As)-short-period -lattice matrices; 2×4 reconstructed (001) surface; In0.52Al0.48As; In0.53Ga0.47As; InAs; InP; InP(001); MBE; RHEED; alignment; composition; high energy electron diffraction; molecular beam epitaxy; multilayer structure; quantum wires; self-assembled InAs quantum wires; spacer layers; Fabrication; Indium compounds; Indium phosphide; Molecular beam epitaxial growth; Nonhomogeneous media; Quantum dots; Semiconductor films; Substrates; Temperature; Wires;
Conference_Titel :
Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-5814-7
DOI :
10.1109/SIM.2000.939227
