Study of the interactions of ions in silicon: Transient processes and defect production

Author

Lazanu, S. ; Lazanu, I. ; Iordache, G. ; Stavarache, I. ; Lepadatu, A. ; Slav, A.

Author_Institution

POBox MG-7, Nat. Inst. of Mater. Phys., Bucharest, Romania

Volume

02

fYear

2010

fDate

11-13 Oct. 2010

Firstpage

329

Lastpage

332

Abstract

The thermal spike model which takes into account both ionization and nuclear energy loss processes of the projectile as distinct electronic and atomic heat sources is used to describe transient processes induced by ions in silicon. The time and space dependencies of the lattice and electron temperatures near the projectile trajectory are calculated. The contribution of the rise in temperature on defect formation and annealing is considered.

Keywords

annealing; crystal defects; elemental semiconductors; ion beam effects; ionisation; silicon; Si; annealing; atomic heat source; defect formation; defect production; electron temperatures; electronic heat source; ionization; lattice temperatures; nuclear energy loss process; projectile trajectory; silicon; thermal spike model; transient processes; Atomic layer deposition; Energy loss; Gold; Ionization; Silicon; Transient analysis; ion irradiation; silicon; transient processes;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference (CAS), 2010 International

Conference_Location

Sinaia

ISSN

1545-827X

Print_ISBN

978-1-4244-5783-0

Type

conf

DOI

10.1109/SMICND.2010.5650688

Filename

5650688