Title :
New mechanism of initiation of negative differential resistance in the structures based on p-n junctions on exposure to microwave radiation
Author :
Usanov, D.A. ; Skripal, A.V. ; Ugryumova, N.V.
Author_Institution :
Dept. of Phys., Saratov State Univ., Russia
Abstract :
The results of theoretical and experimental investigations of the effect of initiation of negative differential resistance on the current-voltage characteristics for diode structures based on p-n-junctions on exposure to high-level power microwave radiation are presented. Under theoretical analysis of the influence of high-level microwave power on the form of I-V characteristics the change of direct current in the diode because of detector effect, the warming up of free charge carriers and nonlinear characteristics of microwave signal reflection from semiconductor structures are considered
Keywords :
carrier mobility; microwave diodes; negative resistance devices; p-n junctions; current-voltage characteristics; diode structures; direct current; free charge carriers; high-level microwave power; microwave radiation; microwave signal reflection; negative differential resistance; p-n junctions; Detectors; Electromagnetic heating; Frequency; Microwave circuits; Microwave devices; Power transmission lines; Reflection; Semiconductor devices; Semiconductor diodes; Transmission line theory;
Conference_Titel :
Microwaves and Radar, 1998. MIKON '98., 12th International Conference on
Conference_Location :
Krakow
Print_ISBN :
83-906662-0-0
DOI :
10.1109/MIKON.1998.737922
