New mechanism of initiation of negative differential resistance in the structures based on p-n junctions on exposure to microwave radiation

Author

Usanov, D.A. ; Skripal, A.V. ; Ugryumova, N.V.

Author_Institution

Dept. of Phys., Saratov State Univ., Russia

fYear

1998

fDate

20-22 May 1998

Firstpage

74

Abstract

The results of theoretical and experimental investigations of the effect of initiation of negative differential resistance on the current-voltage characteristics for diode structures based on p-n-junctions on exposure to high-level power microwave radiation are presented. Under theoretical analysis of the influence of high-level microwave power on the form of I-V characteristics the change of direct current in the diode because of detector effect, the warming up of free charge carriers and nonlinear characteristics of microwave signal reflection from semiconductor structures are considered

Keywords

carrier mobility; microwave diodes; negative resistance devices; p-n junctions; current-voltage characteristics; diode structures; direct current; free charge carriers; high-level microwave power; microwave radiation; microwave signal reflection; negative differential resistance; p-n junctions; Detectors; Electromagnetic heating; Frequency; Microwave circuits; Microwave devices; Power transmission lines; Reflection; Semiconductor devices; Semiconductor diodes; Transmission line theory;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwaves and Radar, 1998. MIKON '98., 12th International Conference on

Conference_Location

Krakow

Print_ISBN

83-906662-0-0

Type

conf

DOI

10.1109/MIKON.1998.737922

Filename

737922