Incorporation of nitrogen in group III-nitrides-arsenides grown by molecular beam epitaxy (MBE)

Author

Spruytte, S.G. ; Coldren, C.W. ; Larson, M.C. ; Harris, J.S.

fYear

2000

fDate

2000

Firstpage

260

Lastpage

263

Abstract

Group III-nitride-arsenides were grown by MBE employing a nitrogen radio frequency (rf) plasma. To improve the luminescence efficiency, both GaNAs and GaInNAs must be annealed, this anneal improves the crystal quality but also causes nitrogen outdiffusion. Broad area lasers and vertical cavity surface emitting lasers (VCSELs) have been fabricated

Keywords

III-V semiconductors; annealing; diffusion; gallium compounds; indium compounds; molecular beam epitaxial growth; plasma deposition; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; surface emitting lasers; wide band gap semiconductors; GaInNAs; GaNAs; MBE; VCSELs; annealing; broad area lasers; crystal quality; group III-nitrides-arsenides; luminescence efficiency; molecular beam epitaxy; nitrogen; nitrogen outdiffusion; nitrogen radio frequency plasma; rf plasma; vertical cavity surface emitting lasers; Annealing; Gallium arsenide; Luminescence; Molecular beam epitaxial growth; Nitrogen; Plasma sources; Plasma temperature; Substrates; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-5814-7

Type

conf

DOI

10.1109/SIM.2000.939239

Filename

939239