Title :
The influence of delta-doped sheet position on the optical properties of InGaAs/GaAs single quantum wells
Author :
Dao, L.V. ; Gal, M. ; Li, G. ; Jagadisho, C.
Author_Institution :
Sch. of Phys., New South Wales Univ., Sydney, NSW, Australia
Abstract :
We found that the time integrated (CW) and time resolved photo-luminescence (PL) spectra of Si δ-doped In0.2Ga 0.8As/GaAs quantum wells (QW´s) depended significantly on the position of the doping sheet. Using time resolved PL we measured the various relaxation times into and out of the well and found strong correlation between the position of the doping sheet and the values of the relaxation times
Keywords :
III-V semiconductors; carrier relaxation time; doping profiles; gallium arsenide; indium compounds; photoluminescence; semiconductor quantum wells; silicon; time resolved spectra; In0.2Ga0.8As:Si-GaAs; InGaAs/GaAs single quantum wells; PL spectra; Si δ-doped In0.2Ga0.8As/GaAs quantum well; delta-doped sheet position; optical properties; relaxation times; time integrated photoluminescence; time resolved PL; time resolved photoluminescence; Australia; Gallium arsenide; Indium gallium arsenide; Laser excitation; Optical scattering; Particle scattering; Physics; Semiconductor device doping; Surface emitting lasers; Time measurement;
Conference_Titel :
Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-5814-7
DOI :
10.1109/SIM.2000.939241
