DocumentCode :
3320247
Title :
Polycrystalline diamond thin film as wide bandgap material: the optoelectronic behaviour and the relationship with the structure
Author :
Pereira, L. ; Pereira, E. ; Rodrigues, A. ; Gomes, H.
Author_Institution :
Dept. de Fisica, Aveiro Univ., Portugal
fYear :
2000
fDate :
2000
Firstpage :
295
Lastpage :
298
Abstract :
In this work metal-Microwave Plasma CVD diamond Schottky devices were studied. The current density vs. applied voltage reveals rectification ratios up to 104 at |±2V|. Under illumination an inversion and increase of the rectification is observed. The carrier density is 1015 cm-3 and the ideality factors near 1.5. The dark current vs. temperature shows that below 150 K the bulk transport is controlled by a hopping process with a density of defects of 1016 cm-3. For higher temperatures an extrinsic ionisation with activation energy of 0.3 eV takes place. The correlation with the polycrystalline nature of the samples is reported
Keywords :
Schottky diodes; carrier density; crystal structure; current density; dark conductivity; diamond; elemental semiconductors; hopping conduction; plasma CVD; plasma CVD coatings; rectification; semiconductor growth; semiconductor thin films; semiconductor-metal boundaries; wide band gap semiconductors; -2 to 2 V; 0.3 eV; 150 K; C; activation energy; applied voltage; bulk transport; carrier density; current density; dark current; defect density; extrinsic ionisation; hopping process; ideality factors; illumination; inversion; metal/microwave plasma CVD diamond Schottky devices; optoelectronic behaviour; polycrystalline diamond thin film; rectification ratios; structure; wide bandgap material; Charge carrier density; Current density; Lighting; Photonic band gap; Plasma density; Plasma devices; Plasma materials processing; Plasma temperature; Transistors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-5814-7
Type :
conf
DOI :
10.1109/SIM.2000.939246
Filename :
939246
Link To Document :
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