Title :
RHEED investigation of MBE growth of ZnSe epilayer on GaAs (111) B
Author :
Gard, F.S. ; May, M. ; James, D. ; Riley, JD ; Leckey, R. ; Usher, B.F.
Author_Institution :
Dept. of Phys., La Trobe Univ., Bundoora, Vic., Australia
Abstract :
We present a comparative study of ZnSe growth conditions on GaAs (111) B (As-terminated) substrates using reflection high-energy electron diffraction (RHEED). The dynamic changes in RHEED intensity were used to obtain qualitative information about the surface during the growth of ZnSe epilayers. Changes in growth conditions cause a transition from a “wavy growth” mode to a three-dimensional growth mode. An atomic force microscope was used to image the surface morphology. AFM images provided a visual evidence of mound creation on the GaAs (111) B surface
Keywords :
II-VI semiconductors; atomic force microscopy; gallium arsenide; molecular beam epitaxial growth; reflection high energy electron diffraction; semiconductor epitaxial layers; semiconductor growth; substrates; surface structure; zinc compounds; AFM; GaAs; GaAs (111) B; GaAs-ZnSe; MBE growth; RHEED; RHEED intensity; ZnSe epilayer growth; ZnSe growth conditions; atomic force microscope; mounds creation; reflection high-energy electron diffraction; surface morphology; three-dimensional growth mode; wavy growth mode; Atomic force microscopy; Atomic measurements; Gallium arsenide; Image reconstruction; Photonic band gap; Substrates; Surface morphology; Surface reconstruction; Temperature; Zinc compounds;
Conference_Titel :
Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-5814-7
DOI :
10.1109/SIM.2000.939253
