RHEED investigation of MBE growth of ZnSe epilayer on GaAs (111) B

Author

Gard, F.S. ; May, M. ; James, D. ; Riley, JD ; Leckey, R. ; Usher, B.F.

Author_Institution

Dept. of Phys., La Trobe Univ., Bundoora, Vic., Australia

fYear

2000

fDate

2000

Firstpage

322

Lastpage

325

Abstract

We present a comparative study of ZnSe growth conditions on GaAs (111) B (As-terminated) substrates using reflection high-energy electron diffraction (RHEED). The dynamic changes in RHEED intensity were used to obtain qualitative information about the surface during the growth of ZnSe epilayers. Changes in growth conditions cause a transition from a “wavy growth” mode to a three-dimensional growth mode. An atomic force microscope was used to image the surface morphology. AFM images provided a visual evidence of mound creation on the GaAs (111) B surface

Keywords

II-VI semiconductors; atomic force microscopy; gallium arsenide; molecular beam epitaxial growth; reflection high energy electron diffraction; semiconductor epitaxial layers; semiconductor growth; substrates; surface structure; zinc compounds; AFM; GaAs; GaAs (111) B; GaAs-ZnSe; MBE growth; RHEED; RHEED intensity; ZnSe epilayer growth; ZnSe growth conditions; atomic force microscope; mounds creation; reflection high-energy electron diffraction; surface morphology; three-dimensional growth mode; wavy growth mode; Atomic force microscopy; Atomic measurements; Gallium arsenide; Image reconstruction; Photonic band gap; Substrates; Surface morphology; Surface reconstruction; Temperature; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-5814-7

Type

conf

DOI

10.1109/SIM.2000.939253

Filename

939253