Optical and electrical characterisation of iron-doped ZnO

Author

Gaspar, C. ; Pereira, L. ; Costa, F.M. ; Monteiro, T. ; Han, Jiaping ; Senos, A.M.R. ; Mantas, P.

Author_Institution

Dept. de Fisica, Aveiro Univ., Portugal

fYear

2000

fDate

2000

Firstpage

326

Lastpage

329

Abstract

The 1.7855 eV luminescence and electrical DC behaviour in polycrystalline ZnO are studied. Luminescence transient decay times of 1.4 ms and 23 ms are found at 11 K. While the first one remains constant with temperature the slower one decreases reaching a value of 5 ms at 160 K with an activation energy of 76 meV. A fast decrease of the intensity above 30 K with activation energy of 8 meV was found. Electrical DC measurements show a space charge limited current behaviour with an activation energy of 40 meV above 30 K. For lower temperatures a variable range hopping was found. Based on this data an excitonic model for the centre is proposed

Keywords

II-VI semiconductors; deep levels; excitons; hopping conduction; impurity states; iron; photoluminescence; radiation quenching; radiative lifetimes; space-charge-limited conduction; spectral line intensity; time resolved spectra; wide band gap semiconductors; zinc compounds; 1.4 ms; 1.7855 eV; 11 K; 160 K; 23 ms; 30 K; 40 meV; 5 ms; 76 meV; 8 meV; ZnO:Fe; activation energy; electrical DC behaviour; excitonic model; iron-doped ZnO; luminescence intensity; luminescence transient decay times; space charge limited current behaviour; variable range hopping; Electric variables measurement; Iron; Luminescence; Optical sensors; Photonic band gap; Pollution measurement; Stimulated emission; Temperature distribution; Temperature measurement; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-5814-7

Type

conf

DOI

10.1109/SIM.2000.939254

Filename

939254