Title :
Comparison of PIn and NIp AlGaN UV photodiodes for solar-blind performance
Author :
Kuek, J.J. ; Pulfrey, D.L. ; Nener, B.D. ; Dell, J.M.
Author_Institution :
Dept. of Electr. & Electron. Eng., Western Australia Univ., Perth, WA, Australia
Abstract :
In this paper, n-i-Al0.33Ga0.67N/p-GaN (NIp) photodiode structures are examined as an alternative to p-i-Al0.33 Ga0.6/7Nn-GaN (PIn) structures for improved signal rejection for wavelengths longer than 300 nm in UV solar-blind detectors. The effect of incorporating an additional Al0.33Ga 0.67N layer for barrier enhancement at the heterointerface of NIp photodiodes is also evaluated. It is shown that even with the inclusion of a barrier enhancement layer, PIn structures are better suited for solar blind detection given the limitation in the growth of doped thick Al0.33Ga0.67N layers
Keywords :
III-V semiconductors; aluminium compounds; band structure; gallium compounds; interface states; p-i-n photodiodes; semiconductor device models; semiconductor heterojunctions; ultraviolet detectors; 300 nm; Al0.33Ga0.67N additional layer; Al0.33Ga0.67N-GaN; NIp photodiode structure; PIn photodiode structure; UV photodiodes; UV solar-blind detectors; band offset; heterointerface barrier enhancement; n-i-Al0.33Ga0.67N/p-GaN; p-i-Al0.33Ga0.6/7Nn-GaN; signal rejection; solar-blind performance; Absorption; Aluminum gallium nitride; Australia; Detectors; Gallium nitride; Heterojunctions; Lighting; Photodetectors; Photodiodes; Solar power generation;
Conference_Titel :
Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-5814-7
DOI :
10.1109/SIM.2000.939255
