DocumentCode
3320412
Title
Analysis of trap-related kink dynamics in GaAs MESFETs
Author
Horio, K. ; Wakabayashi, A. ; Mitani, Y.
Author_Institution
Fac. of Syst. Eng., Shibaura Inst. of Technol., Omiya, Japan
fYear
2000
fDate
2000
Firstpage
337
Lastpage
340
Abstract
Effects of surface states and substrate traps on the “kink” (an abnormal increase in output conductance with the drain voltage) in GaAs MESFETs are studied by 2-D analysis. It is shown that the kink could also arise due to the surface-state effects: impact ionization of holes and the following hole trapping by the surface states. Transient or dynamic simulation indicates that the trap-related kink phenomena ate rather slow processes with long response times
Keywords
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; hole traps; impact ionisation; semiconductor device models; surface states; 2-D analysis; GaAs; GaAs MESFETs; hole trapping; impact ionization; long response times; substrate traps; surface states; trap-related kink dynamics; Electron traps; Energy states; Gallium arsenide; Impact ionization; MESFETs; Poisson equations; Steady-state; Surface treatment; Systems engineering and theory; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International
Conference_Location
Canberra, ACT
Print_ISBN
0-7803-5814-7
Type
conf
DOI
10.1109/SIM.2000.939256
Filename
939256
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