Electrical properties of Schottky barrier in MSM-diode structures

Author

Averine, S. ; Chan, Y.C. ; Lam, Y.L.

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore

fYear

2000

fDate

2000

Firstpage

345

Lastpage

348

Abstract

The electrical behavior of metal-semiconductor-metal (MSM) Schottky barrier structures is analyzed by means of current-voltage (I-V) measurements at different temperatures. The reverse characteristics of the Schottky contact are examined by taking into account the barrier height dependence on the electric field and tunneling through the barrier. Under these conditions, the logarithmic dependence of the reverse current on the reverse bias is a linear function and allows us to evaluate the barrier height, saturation current density and junction ideality factor of the MSM-diode Schottky contact

Keywords

Schottky barriers; Schottky diodes; current density; metal-semiconductor-metal structures; tunnelling; MSM-diode structures; Schottky barrier; barrier height; barrier height dependence; current-voltage measurements; electric field; electrical behavior; junction ideality factor; reverse bias; reverse current; saturation current density; tunneling; Contacts; Current measurement; Electric variables measurement; Fabrication; Photodetectors; Photonics; Schottky barriers; Substrates; Temperature measurement; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-5814-7

Type

conf

DOI

10.1109/SIM.2000.939258

Filename

939258