DocumentCode
3320467
Title
The electrical characteristics of metal-ferroelectric (PbZrx Ti1-xO3)-insulator(Ta2O5 )-silicon structure for non-volatile memory applications
Author
Sze, Chi-yuan ; Lee, Joseph Ya-min
Author_Institution
Dept. of Electr. Eng., Tsinghua Univ., Beijing, China
fYear
2000
fDate
2000
Firstpage
349
Lastpage
352
Abstract
A metal ferroelectric insulator-silicon (MFIS) structure using lead-zirconate-titanate (PZT) as the ferroelectric layer and Ta2 O5 as the insulator layer is fabricated. This structure is studied for the potential application of nonvolatile memory devices. High frequency C-V measurements show a flat band voltage shift of 13 V under a ±15 V writing pulse. The interface-trap density Dit is measured by the conductance method. The MFIS capacitors are shown to have a fatigue lifetime of 1×1011 cycles and 5×107 cycles for 11.4 V and 15 V writing pulses, respectively
Keywords
MIS devices; elemental semiconductors; ferroelectric capacitors; ferroelectric devices; ferroelectric materials; ferroelectric storage; ferroelectric thin films; interface states; lead compounds; silicon; tantalum compounds; -15 to 15 V; 13 V; C-V measurements; Jk-PbZrO3TiO3-Ta2O5-Si; PZT; conductance method; electrical characteristics; fatigue lifetime; ferroelectric layer; flat band voltage shift; interface-trap density; metal-(PbZrxTi1-xO3)-(Ta2 O5)-Si structure; metal-ferroelectric-insulator-silicon structure; nonvolatile memory applications; Capacitance-voltage characteristics; Electric variables; Ferroelectric materials; Frequency measurement; Insulation; Metal-insulator structures; Nonvolatile memory; Pulse measurements; Voltage; Writing;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International
Conference_Location
Canberra, ACT
Print_ISBN
0-7803-5814-7
Type
conf
DOI
10.1109/SIM.2000.939259
Filename
939259
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