Title :
The electrical characteristics of metal-ferroelectric (PbZrx Ti1-xO3)-insulator(Ta2O5 )-silicon structure for non-volatile memory applications
Author :
Sze, Chi-yuan ; Lee, Joseph Ya-min
Author_Institution :
Dept. of Electr. Eng., Tsinghua Univ., Beijing, China
Abstract :
A metal ferroelectric insulator-silicon (MFIS) structure using lead-zirconate-titanate (PZT) as the ferroelectric layer and Ta2 O5 as the insulator layer is fabricated. This structure is studied for the potential application of nonvolatile memory devices. High frequency C-V measurements show a flat band voltage shift of 13 V under a ±15 V writing pulse. The interface-trap density Dit is measured by the conductance method. The MFIS capacitors are shown to have a fatigue lifetime of 1×1011 cycles and 5×107 cycles for 11.4 V and 15 V writing pulses, respectively
Keywords :
MIS devices; elemental semiconductors; ferroelectric capacitors; ferroelectric devices; ferroelectric materials; ferroelectric storage; ferroelectric thin films; interface states; lead compounds; silicon; tantalum compounds; -15 to 15 V; 13 V; C-V measurements; Jk-PbZrO3TiO3-Ta2O5-Si; PZT; conductance method; electrical characteristics; fatigue lifetime; ferroelectric layer; flat band voltage shift; interface-trap density; metal-(PbZrxTi1-xO3)-(Ta2 O5)-Si structure; metal-ferroelectric-insulator-silicon structure; nonvolatile memory applications; Capacitance-voltage characteristics; Electric variables; Ferroelectric materials; Frequency measurement; Insulation; Metal-insulator structures; Nonvolatile memory; Pulse measurements; Voltage; Writing;
Conference_Titel :
Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-5814-7
DOI :
10.1109/SIM.2000.939259
