Title :
The fabrication and characterization of metal-oxide-semiconductor field effect transistors and gated diodes using Ta2O5 gate oxide
Author :
Yu, Jing-Chi ; Lai, Benjamin Chihming ; Lee, Joseph Ya-min
Author_Institution :
Dept. of Electr. Eng., Tsinghua Univ., Beijing, China
Abstract :
N-channel metal oxide semiconductor field effect transistors (MOSFET) using Ta2O5 gate oxide were fabricated. The IDS-VDS and IDS-VGS characteristics were measured. The electron mobility was 333 cm2 /V-s. The subthreshold swing was 73 mV/dec. The interface trapped charge density, the surface recombination velocity and the minority carrier lifetime measured from gated diodes were 9.5×1012 cm-2-eV-1, 780 cm/s and 3×10-6 sec, respectively,
Keywords :
MOSFET; carrier lifetime; electron mobility; interface states; minority carriers; surface recombination; tantalum compounds; MOSFET; Ta2O5; Ta2O5 gate oxide; characterization; electron mobility; fabrication; gated diodes; interface trapped charge density; metal-oxide-semiconductor field effect transistors; minority carrier lifetime; subthreshold swing; surface recombination velocity; Charge carrier lifetime; Current measurement; Density measurement; Electron mobility; Electron traps; FETs; Fabrication; MOSFET circuits; Radiative recombination; Spontaneous emission;
Conference_Titel :
Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-5814-7
DOI :
10.1109/SIM.2000.939260
