Design and simulation of a CMOS-MEMS gyroscope with a low-noise sensing circuit

Author

Hung, Hung-Yao ; Chang, Dou-Ru ; Shih, Wen-Pin

Author_Institution

Dept. of Mech. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

2

fYear

2010

fDate

5-7 May 2010

Firstpage

253

Lastpage

256

Abstract

A design and simulation of z-axis dual-mass CMOS-MEMS gyroscope with a low-noise capacitance sensing circuit has been presented in this paper. A gyroscope chip which implemented by the TSMC 2P4M 0.35 μm CMOS-MEMS process was proposed in this design. The associated post process was designed. For the z-axis dual-mass CMOS-MEMS gyroscope, the fully differential low-noise capacitive sensing circuit has been designed and discussed. This capacitance sensing circuit can reach the performance of low-noise by modulating the noise signal to high frequency band and then the noise would be filtered. Finally, we obtained the output noise of 9 nV/√(Hz) and the residual noise of 0.1 mV by using HSPICE simulation. However, the sensitivity of 0.476 mV/°/s and system noise of 0.063 mV/√(Hz) of the gyroscope system was obtained.

Keywords

CMOS integrated circuits; capacitive sensors; gyroscopes; microsensors; complementary metal-oxide-semiconductor; frequency band; low-noise capacitance sensing circuit; microelectromechanical system; noise signal modulation; z-axis dual-mass CMOS-MEMS gyroscope; Actuators; Biomembranes; Capacitance; Circuit noise; Circuit simulation; Fingers; Gyroscopes; Process design; Silicon; Wet etching; CMOS-MEMS; capacitance; circuit; gyroscope; sensing;

fLanguage

English

Publisher

ieee

Conference_Titel

Computer Communication Control and Automation (3CA), 2010 International Symposium on

Conference_Location

Tainan

Print_ISBN

978-1-4244-5565-2

Type

conf

DOI

10.1109/3CA.2010.5533538

Filename

5533538