Advanced cryogenic aerosol cleaning: application to damagefree cleaning of sensitive structured wafers

Author

Lauerhaas, Jeffrey M. ; Weygand, James F. ; Thomes, Greg P.

Author_Institution

FSI Int., Chaska, MN

fYear

2005

fDate

11-12 April 2005

Firstpage

11

Lastpage

16

Abstract

Cryogenic aerosols formed from either argon and nitrogen or nitrogen gas only have proven successful for high particulate removal without material loss or modification and damage free cleaning of poly silicon line structures. Particle removal efficiency is reported on particulate contamination down to 65 nm. Results on 60 nm poly silicon structures have shown no damage and a particle removal efficiency greater than 92%. Further reducing the poly line critical dimension to 40 nm resulted in particle removal efficiency greater than 71% and has no damage

Keywords

aerosols; argon; cryogenics; decontamination; elemental semiconductors; integrated circuit manufacture; nitrogen; silicon; surface cleaning; 40 nm; 60 nm; 65 nm; cryogenic aerosol cleaning; damage free cleaning; high particulate removal; particle removal efficiency; particulate contamination; polysilicon line structures; sensitive structured wafers; Aerosols; Argon; Cleaning; Cryogenics; Etching; Hardware; Nitrogen; Semiconductor materials; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Manufacturing Conference and Workshop, 2005 IEEE/SEMI

Conference_Location

Munich

Print_ISBN

0-7803-8997-2

Type

conf

DOI

10.1109/ASMC.2005.1438759

Filename

1438759