DocumentCode :
3321457
Title :
Adaptive sampling methodology for in-line defect inspection
Author :
Bousetta, Ali ; Cross, Andrew J.
Author_Institution :
KLA-Tencor Corp., San Jose, CA
fYear :
2005
fDate :
11-12 April 2005
Firstpage :
25
Lastpage :
31
Abstract :
Today´s advanced semiconductor manufacturers have well over one hundred process steps and several weeks of throughput times. In order to minimize the product at risk at final test, in-line defect monitoring inspection with an adequate sampling plan are used to measure and collect defectivity levels on product wafers at key inspection steps during both process development and high-volume manufacturing phases. The sampling plan for inspection is constrained by the inspection tools available capacity whilst being driven by cost of excursions or material at risk. In this paper, key metrics such as the variance ratio, defined as the ratio between lot-to-lot variance and wafer-to-wafer variance, the excursion frequency, and the normalized mean shift are analyzed as the sampling (%lots, #wfrs/lot) is modified. The results are then used to propose a method of monitoring and controlling these key metrics to trigger a mechanism for more or less sampling (adaptive or dynamic sampling) to better utilize the inspection resources and quicker excursion detection while minimizing the yield loss to production
Keywords :
condition monitoring; inspection; integrated circuit yield; process monitoring; sampling methods; adaptive sampling methodology; advanced semiconductor manufacturers; excursion frequency; inline defect inspection; inline defect monitoring inspection; inspection tools; lot-to-lot variance; normalized mean shift; process development; product wafers; wafer-to-wafer variance; yield loss; Capacity planning; Costs; Inspection; Manufacturing processes; Monitoring; Phase measurement; Sampling methods; Semiconductor device manufacture; Testing; Throughput;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Manufacturing Conference and Workshop, 2005 IEEE/SEMI
Conference_Location :
Munich
Print_ISBN :
0-7803-8997-2
Type :
conf
DOI :
10.1109/ASMC.2005.1438762
Filename :
1438762
Link To Document :
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