Title :
Reactive ion etching optimization method based on orthogonal experiment
Author :
Wang Xiaoguang ; Qi Hong ; Zhang Yan
Author_Institution :
Eng. Center of Chip & Microsyst., CETC Harbin, Harbin, China
Abstract :
The orthogonal experiment is used for selecting parameters of the etching SIO2 equipment. The process applies etching uniformity and etching rate as evaluation indexes. The main factors influencing etching process are found out. Through further optimization, the advanced SIO2 etching is made to realize etching uniformity less than 5% and etching rate higher than 300nm/min.
Keywords :
silicon compounds; sputter etching; SiO2; etching rate; etching uniformity; orthogonal experiment; reactive ion etching optimization method; Etching; Indexes; Plasmas; Radio frequency; Resists; Silicon; etching rate; the orthogonal experiment; uniformity;
Conference_Titel :
Electronic Measurement & Instruments (ICEMI), 2013 IEEE 11th International Conference on
Conference_Location :
Harbin
Print_ISBN :
978-1-4799-0757-1
DOI :
10.1109/ICEMI.2013.6743151
