Title :
Silicon carbide: barriers to manufacturable devices
Author :
Shovlin, Joseph ; Woodin, Richard ; Witt, Tony ; Dolny, Gary ; Shenoy, Praveen
Author_Institution :
Fairchild Semicond. Corp., South Portland, ME
Abstract :
Wide band-gap semiconductor materials are attractive candidates for overcoming the limitations of silicon for high voltage/high power devices. SiC devices are beginning to appear in the marketplace; however there are several significant barriers which must be overcome before SiC can become a mainstream semiconductor material. This paper discussed these barriers, and solutions for overcoming them
Keywords :
integrated circuit manufacture; silicon compounds; wide band gap semiconductors; SiC; band-gap semiconductor materials; high power devices; high voltage devices; mainstream semiconductor material; manufacturable devices; silicon carbide; Conducting materials; Gallium arsenide; Gallium nitride; Manufacturing; Photonic band gap; Semiconductor materials; Silicon carbide; Substrates; Thermal conductivity; Voltage;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference and Workshop, 2005 IEEE/SEMI
Conference_Location :
Munich
Print_ISBN :
0-7803-8997-2
DOI :
10.1109/ASMC.2005.1438790
