DocumentCode
3322518
Title
Long-term charge stability of silicon dioxide electrets
Author
Ichiya, Mitsuo ; Lewiner, Jacques
Author_Institution
Matsushita Electr. Ind. Co. Ltd., Kadoma, Japan
fYear
1996
fDate
25-30 Sep 1996
Firstpage
9
Lastpage
15
Abstract
In this paper, we report the investigation of silicon dioxide electrets by using plasma chemical vapor deposition (PCVD) and thermal oxidation process. It is shown that by using a proper process, long-term charge stability can be obtained, even at elevated temperatures. Physical studies will be described, in which the charge stability is correlated to Thermally Stimulated Current (TSC) measurements and to Electron Spin Resonance (ESR) analysis. Some intrinsic differences have been observed between materials with different long-term charge stability
Keywords
dielectric thin films; electrets; oxidation; paramagnetic resonance; plasma CVD; silicon compounds; thermally stimulated currents; ESR; SiO2; electrets; long-term charge stability; plasma CVD; thermal oxidation; thermally stimulated current; Chemical vapor deposition; Electrets; Oxidation; Paramagnetic resonance; Plasma chemistry; Plasma measurements; Plasma stability; Plasma temperature; Silicon compounds; Stability analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrets, 1996. (ISE 9), 9th International Symposium on
Conference_Location
Shanghai
Print_ISBN
0-7803-2695-4
Type
conf
DOI
10.1109/ISE.1996.578030
Filename
578030
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