Title :
Defect Mapping and Adaptive Configuration of Nanoelectronic Circuits Based on a CNT Crossbar Nano-Architecture
Author_Institution :
Univ. of Texas at San Antonio, San Antonio, TX, USA
Abstract :
Successful fabrication of a variety of nanoscale devices leads to research on nanoscale device integration, nano-architecture exploration, and nanoelectronic design techniques. This paper proposes a complete set of linear complexity catastrophic defect mapping techniques for CNT crossbar nano-architecture, as well as an adaptive CNT matching method for double gate CN-FETs in the presence of CNT misalignment. Combined with adaptive nano-addressing method, these proposed techniques enable adaptive configuration of nanoelectronic circuits of correct functionality, performance, and reliability based on the CNT crossbar nano-architecture.
Keywords :
carbon nanotubes; field effect transistors; nanoelectronics; CNT crossbar nano-architecture; CNT misalignment; adaptive CNT matching; adaptive configuration; adaptive nano-addressing method; carbon nanotubes; double gate CN-FET; field effect transistor; linear complexity catastrophic defect mapping; nanoelectronic circuit; nanoelectronic design; nanoscale device integration; CMOS logic circuits; CNTFETs; Carbon nanotubes; Fabrication; Integrated circuit interconnections; Logic arrays; MOSFETs; Nanoscale devices; Semiconductor diodes; Very large scale integration;
Conference_Titel :
Computer Communications and Networks, 2009. ICCCN 2009. Proceedings of 18th Internatonal Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-4581-3
Electronic_ISBN :
1095-2055
DOI :
10.1109/ICCCN.2009.5235271
