Defect Mapping and Adaptive Configuration of Nanoelectronic Circuits Based on a CNT Crossbar Nano-Architecture

Author

Liu, Bao

Author_Institution

Univ. of Texas at San Antonio, San Antonio, TX, USA

fYear

2009

fDate

3-6 Aug. 2009

Firstpage

1

Lastpage

6

Abstract

Successful fabrication of a variety of nanoscale devices leads to research on nanoscale device integration, nano-architecture exploration, and nanoelectronic design techniques. This paper proposes a complete set of linear complexity catastrophic defect mapping techniques for CNT crossbar nano-architecture, as well as an adaptive CNT matching method for double gate CN-FETs in the presence of CNT misalignment. Combined with adaptive nano-addressing method, these proposed techniques enable adaptive configuration of nanoelectronic circuits of correct functionality, performance, and reliability based on the CNT crossbar nano-architecture.

Keywords

carbon nanotubes; field effect transistors; nanoelectronics; CNT crossbar nano-architecture; CNT misalignment; adaptive CNT matching; adaptive configuration; adaptive nano-addressing method; carbon nanotubes; double gate CN-FET; field effect transistor; linear complexity catastrophic defect mapping; nanoelectronic circuit; nanoelectronic design; nanoscale device integration; CMOS logic circuits; CNTFETs; Carbon nanotubes; Fabrication; Integrated circuit interconnections; Logic arrays; MOSFETs; Nanoscale devices; Semiconductor diodes; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Computer Communications and Networks, 2009. ICCCN 2009. Proceedings of 18th Internatonal Conference on

Conference_Location

San Francisco, CA

ISSN

1095-2055

Print_ISBN

978-1-4244-4581-3

Electronic_ISBN

1095-2055

Type

conf

DOI

10.1109/ICCCN.2009.5235271

Filename

5235271