High power ultrafast semiconductor lasers-intracavity dynamics and the implications for future development in modelocked semiconductor lasers

Author

Gee, S. ; Alphonse, G. ; Connolly, J. ; Barty, C.P.J. ; Delfyett, P.J.

Author_Institution

Center for Res. & Educ. in Opt. & Lasers, Univ. of Central Florida, Orlando, FL, USA

Volume

2

fYear

1998

fDate

3-4 Dec 1998

Firstpage

13

Abstract

The pulse shaping dynamics are measured and explained using self phase locking (SPM), saturable absorption and group velocity dispersion (GVD). In addition, intracavity spectral shaping and inverse bow tie SOAs are shown to be promising for future pulsewidth reduction and high power generation, respectively

Keywords

laser cavity resonators; laser mode locking; optical dispersion; optical pulse shaping; optical saturable absorption; self-phase modulation; semiconductor optical amplifiers; group velocity dispersion; high power generation; high power ultrafast semiconductor lasers; intracavity dynamics; intracavity spectral shaping; inverse bow tie SOAs; modelocked semiconductor lasers; pulse shaping dynamics; pulsewidth reduction; saturable absorption; self phase locking; Absorption; Dispersion; Phase measurement; Power lasers; Pulse measurements; Pulse shaping methods; Scanning probe microscopy; Semiconductor lasers; Space vector pulse width modulation; Velocity measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE

Conference_Location

Orlando, FL

Print_ISBN

0-7803-4947-4

Type

conf

DOI

10.1109/LEOS.1998.739436

Filename

739436