DocumentCode
332321
Title
Mid-IR semiconductor lasers for chemical sensing
Author
Popov, A.A.
Volume
2
fYear
1998
fDate
3-4 Dec 1998
Abstract
Investigations of 3.2-3.6 μm continuous wave InAsSb lasers are reported with respect to spectroscopic applications, their application to methane and formaldehyde measurements as an example. The devices were InAsSb-InAsSbP double heterostructure stripe lasers. The basic, spectral and tuning characteristics at cryogenic temperatures were analyzed using a calibrated automated laser test setup
Keywords
III-V semiconductors; calibration; gas sensors; indium compounds; infrared detectors; laser transitions; laser tuning; semiconductor lasers; 3.2 to 3.6 mum; IR sensors; InAsSb; InAsSb-InAsSbP; InAsSb-InAsSbP double heterostructure stripe lasers; calibrated automated laser test setup; chemical sensing; continuous wave InAsSb laser; formaldehyde measurements; gas sensors; laser tuning characteristics; methane; mid-IR semiconductor lasers; spectral characteristics; spectroscopic applications; Atmospheric waves; Chemical analysis; Chemical lasers; Diode lasers; Gas lasers; Laser tuning; Quantum cascade lasers; Quantum well lasers; Semiconductor lasers; Spectroscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location
Orlando, FL
Print_ISBN
0-7803-4947-4
Type
conf
DOI
10.1109/LEOS.1998.739720
Filename
739720
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