A micro-power CMOS RF front-end for embedded wireless devices

Author

Rofougaran, Razieh ; Lin, Tsung-Hsien ; Newberg, Fredric ; Kaiser, William J.

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

fYear

1999

fDate

1999

Firstpage

17

Lastpage

20

Abstract

Motivated by the emerging needs for low power narrow-band wireless communication systems, the first micro-power RFIC front-end has been designed using weak inversion CMOS techniques. The front-end, a low-noise amplifier (LNA) combined with a downconversion mixer, has been implemented in a standard 0.8 μm CMOS process. The front-end supply current is less than 110 μA at 3 V supply bias for operation at 450 MHz. High-Q inductors, used in the front-end design, have been manufactured using low-temperature cofired ceramic technology. The front-end´s gain is 25 dB with an IP3 of -15 dBm. This is the lowest current consumption reported to date for a CMOS front-end operating at this frequency

Keywords

CMOS integrated circuits; UHF amplifiers; UHF integrated circuits; UHF mixers; low-power electronics; radio equipment; 0.8 micron; 110 muA; 25 dB; 3 V; 450 MHz; LNA; LTCC technology; RFIC front-end; downconversion mixer; embedded wireless devices; high-Q inductors; low-noise amplifier; low-temperature cofired ceramic technology; micro-power CMOS RF front-end; narrow-band wireless communication systems; weak inversion CMOS techniques; CMOS process; CMOS technology; Current supplies; Inductors; Low-noise amplifiers; Manufacturing; Narrowband; Radio frequency; Radiofrequency integrated circuits; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 1999 IEEE

Conference_Location

Anaheim, CA

ISSN

1097-2633

Print_ISBN

0-7803-5604-7

Type

conf

DOI

10.1109/RFIC.1999.805230

Filename

805230