An RF front-end for the direct conversion WCDMA receiver

Author

Ryynänen, Jussi ; Pärssinen, Aarno ; Jussila, Jarkko ; Halonen, Kari

Author_Institution

Electron. Circuit Design Lab., Helsinki Univ. of Technol., Espoo, Finland

fYear

1999

fDate

1999

Firstpage

21

Lastpage

24

Abstract

A direct conversion RF front-end receiver chip, which can be used in the 3rd generation mobile communications, is introduced. The RF chip consists of a LNA, quadrature mixers and a 90° LO phase shift network. It uses a 25 GHz f_t BiCMOS process with a 0.35 μm MOS gate length. The front-end has a 27.5 dB voltage gain, 4 dB NF (DSB), -9 dBm IIP3 and +43 dBm IIP2. It draws 41 mA from a 2.7 V supply

Keywords

BiCMOS analogue integrated circuits; UHF amplifiers; UHF integrated circuits; UHF mixers; code division multiple access; digital radio; integrated circuit design; mobile radio; radio receivers; 0.35 micron; 1.92 to 2.17 GHz; 2 Mbit/s; 2.7 V; 25 GHz; 27.5 dB; 4 dB; 41 mA; BiCMOS process; LNA; LO phase shift network; RF front-end; RFIC; direct conversion WCDMA receiver; front-end receiver chip; mobile communications; quadrature mixers; wideband CDMA; Bandwidth; Baseband; Bonding; Impedance matching; Inductors; Low pass filters; Multiaccess communication; Radio frequency; Resistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 1999 IEEE

Conference_Location

Anaheim, CA

ISSN

1097-2633

Print_ISBN

0-7803-5604-7

Type

conf

DOI

10.1109/RFIC.1999.805231

Filename

805231