C-band Si 3DMMIC transceiver for wireless applications

Author

Nishikawa, Kenjiro ; Kamogawa, Kenji ; Toyoda, Ichihiko ; Tokumitsu, Tsuneo ; Tanaka, Masayoshi

Author_Institution

NTT Wireless Syst. Labs., Yokosuka, Japan

fYear

1999

fDate

1999

Firstpage

35

Lastpage

38

Abstract

This paper presents a C-band Si MMIC transceiver based on 3DMMIC technology. A low-noise amplifier achieves 8 dB gain and 3 dB noise figure at 1 V collector bias voltage. A power amplifier achieves 19 dBm output power at 4 V collector bias voltage. Down- and up-converters are also presented. The fabricated MMICs achieve performance comparable with that of GaAs MESFET MMICs in the 5 GHz band despite use of a low resistivity Si wafer. The developed Si 3DMMIC with a VCO in a single 1.8 mm×1.8 mm chip enable the realization of low-cost C-band RF equipment

Keywords

bipolar MMIC; elemental semiconductors; microwave links; silicon; transceivers; 1 V; 3 dB; 3D MMIC technology; 4 V; 5 GHz; 8 dB; C-band transceiver; Si; Si MMIC transceiver; VCO; downconverters; low resistivity Si wafer; low-noise amplifier; power amplifier; upconverters; wireless applications; Gain; Gallium arsenide; Low-noise amplifiers; MESFETs; MMICs; Noise figure; Power amplifiers; Power generation; Transceivers; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 1999 IEEE

Conference_Location

Anaheim, CA

ISSN

1097-2633

Print_ISBN

0-7803-5604-7

Type

conf

DOI

10.1109/RFIC.1999.805234

Filename

805234