A new GaAs variable gain amplifier MMIC with a wide-dynamic-range and low-voltage-operation linear attenuation circuit

Author

Inamori, M. ; Motoyoshi, K. ; Kitazawa, T. ; Tara, K. ; Hagio, M.

Author_Institution

Discrete Device Div., Matsushita Electron. Corp., Kyoto, Japan

fYear

1999

fDate

1999

Firstpage

39

Lastpage

42

Abstract

A 40 dB-dynamic-range variable gain amplifier designed for CDMA cellular phones has been developed. A wide dynamic range variable gain amplifier under low control voltage of 2.0 V compatible with high linearity and low distortion characteristics essential for CDMA is realized by the new gain control technique. It greatly contributes to the high performance and small size RF circuits of CDMA cellular handsets

Keywords

III-V semiconductors; MESFET integrated circuits; MMIC amplifiers; UHF amplifiers; UHF integrated circuits; attenuators; cellular radio; code division multiple access; field effect MMIC; gain control; gallium arsenide; low-power electronics; telephone sets; 2 V; 900 MHz; CDMA cellular phone; GaAs; GaAs MESFET process; GaAs variable gain amplifier MMIC; LV linear attenuation circuit; cellular handsets; gain control technique; high linearity; low distortion characteristics; low-voltage-operation; wide-dynamic-range; Cellular phones; Dynamic range; Gain; Gallium arsenide; Linearity; Low voltage; MMICs; Multiaccess communication; Radiofrequency amplifiers; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 1999 IEEE

Conference_Location

Anaheim, CA

ISSN

1097-2633

Print_ISBN

0-7803-5604-7

Type

conf

DOI

10.1109/RFIC.1999.805235

Filename

805235