Title :
A new GaAs variable gain amplifier MMIC with a wide-dynamic-range and low-voltage-operation linear attenuation circuit
Author :
Inamori, M. ; Motoyoshi, K. ; Kitazawa, T. ; Tara, K. ; Hagio, M.
Author_Institution :
Discrete Device Div., Matsushita Electron. Corp., Kyoto, Japan
Abstract :
A 40 dB-dynamic-range variable gain amplifier designed for CDMA cellular phones has been developed. A wide dynamic range variable gain amplifier under low control voltage of 2.0 V compatible with high linearity and low distortion characteristics essential for CDMA is realized by the new gain control technique. It greatly contributes to the high performance and small size RF circuits of CDMA cellular handsets
Keywords :
III-V semiconductors; MESFET integrated circuits; MMIC amplifiers; UHF amplifiers; UHF integrated circuits; attenuators; cellular radio; code division multiple access; field effect MMIC; gain control; gallium arsenide; low-power electronics; telephone sets; 2 V; 900 MHz; CDMA cellular phone; GaAs; GaAs MESFET process; GaAs variable gain amplifier MMIC; LV linear attenuation circuit; cellular handsets; gain control technique; high linearity; low distortion characteristics; low-voltage-operation; wide-dynamic-range; Cellular phones; Dynamic range; Gain; Gallium arsenide; Linearity; Low voltage; MMICs; Multiaccess communication; Radiofrequency amplifiers; Voltage control;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 1999 IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-5604-7
DOI :
10.1109/RFIC.1999.805235
