DocumentCode :
3323342
Title :
A plastic package GaAs MESFET 5.8 GHz receiver front-end with on-chip matching for ETC system
Author :
Low, Eng Chuan ; Nakamura, Hiroshi ; Fujishiro, Hiroki I. ; Yan, Kai Tuan
Author_Institution :
Inst. of Microelectron., Singapore
fYear :
1999
fDate :
1999
Firstpage :
43
Lastpage :
46
Abstract :
A plastic package GaAs MESFET receiver front-end MMIC operating at 5.8 GHz is presented. It has a two stage LNA followed by a dual-gate mixer. Operating at 3 V and 8.3 mA, CG of 20.4 dB, NF of 4.1 dB, and high port-to-port isolations have been achieved. A 3 dB bandwidth of CG is 1 GHz
Keywords :
III-V semiconductors; MESFET integrated circuits; MMIC mixers; field effect MMIC; gallium arsenide; impedance matching; integrated circuit design; integrated circuit packaging; microwave links; plastic packaging; radio receivers; 1 GHz; 20.4 dB; 3 V; 4.1 dB; 5.8 GHz; 8.3 mA; ETC system; GaAs; GaAs MESFET front-end chip; dual-gate mixer; front-end MMIC; onchip matching; plastic package receiver front-end; two stage LNA; Bonding; Character generation; Circuit synthesis; Gallium arsenide; MESFETs; MMICs; Plastic packaging; Radio frequency; System-on-a-chip; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 1999 IEEE
Conference_Location :
Anaheim, CA
ISSN :
1097-2633
Print_ISBN :
0-7803-5604-7
Type :
conf
DOI :
10.1109/RFIC.1999.805236
Filename :
805236
Link To Document :
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