Title :
A low power 15 GHz frequency divider in a 0.8 μm silicon bipolar production technology
Author :
Knapp, Herbert ; Wilhelm, Wilhelm ; Wurzer, Martin
Author_Institution :
Siemens AG, Munich, Germany
Abstract :
A low power static frequency divider with a divide ratio of 8 operating up to 15 GHz while consuming only 22 mA from a 3.6 V to 6 V supply is presented. It is manufactured in a conventional 0.8 μm silicon bipolar technology with a cut-off frequency of 25 GHz. The chip is mounted in a SOT363 package
Keywords :
bipolar digital integrated circuits; elemental semiconductors; frequency dividers; low-power electronics; microwave frequency convertors; silicon; 0.8 micron; 15 GHz; 22 mA; 25 GHz; 3.6 to 6 V; SOT363 package; Si; Si bipolar production technology; low power frequency divider; static frequency divider; Clocks; Cutoff frequency; Flip-flops; Frequency conversion; Integrated circuit technology; Manufacturing; Packaging; Production; Silicon; Voltage;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 1999 IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-5604-7
DOI :
10.1109/RFIC.1999.805237
