Title :
A 427 mW, 20% compact W-band InP HEMT MMIC power amplifier
Author :
Ingram, D.L. ; Chen, Y.C. ; Kraus, J. ; Brunner, B. ; Allen, B. ; Yen, H.C. ; Lau, K.F.
Author_Institution :
TRW Inc., Redondo Beach, CA, USA
Abstract :
Presented is the development of a 2-stage 427 mW (26.3 dBm), 19% PAE compact W-band InP monolithic microwave integrated circuit (MMIC) power amplifier with an associated power gain of 8.9 dB. 20% PAE with output power of 407 mW (26.1 dBm) was achieved when the amplifier was biased for optimal efficiency. These MMIC amplifiers were fabricated with a 2-mil thick substrate using 0.15-μm InGaAs/InAlAs/InP HEMT technology. InP amplifier, though operates at lower drain voltage, but it delivers compatible power with double the PAE of its GaAs counter-part
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; field effect MIMIC; indium compounds; millimetre wave power amplifiers; 427 mW; 8.9 dB; HEMT MMIC power amplifier; InGaAs-InAlAs-InP; InGaAs/InAlAs/InP HEMT technology; InP; biased amplifier; compact W-band; optimal efficiency; Gain; HEMTs; Indium gallium arsenide; Indium phosphide; MMICs; Microwave amplifiers; Microwave integrated circuits; Monolithic integrated circuits; Power amplifiers; Power generation;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 1999 IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-5604-7
DOI :
10.1109/RFIC.1999.805247
