Title :
High performance D-band (118 GHz) monolithic low noise amplifier
Author :
Nishimoto, M. ; Sholley, M. ; Wang, H. ; Lai, R. ; Barsky, M. ; Streit, D. ; Chung, Y. ; Aust, M. ; Osgood, B. ; Raja, R. ; Gage, C. ; Gaier, T. ; Lee, K.
Author_Institution :
Electron. Space & Technol. Div., TRW Inc., Redondo Beach, CA, USA
Abstract :
This paper presents the results of 118 GHz amplifier designs with state of art low noise performance using 0.1-μm pseudomorphic InGaAs/InAlAs/InP HEMT technology. A single ended fixtured 118 GHz LNA demonstrated 3.8-4.5 dB NF with an associated gain of greater than 14.5 dB from 112.5 to 119.5 GHz. A on-wafer balanced LNA with gain of 12 dB, return loss of 9 dB from 110 to 130 GHz was also demonstrated
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; field effect MIMIC; gallium arsenide; indium compounds; millimetre wave amplifiers; 118 GHz; 12 dB; 14.5 dB; 9 dB; D-band monolithic LNA; InGaAs-InAlAs-InP; high performance; on-wafer balanced LNA; pseudomorphic InGaAs/InAlAs/InP HEMT; single ended fixtured; Circuit noise; Frequency; Gain measurement; HEMTs; Indium phosphide; Low-noise amplifiers; Noise measurement; Propulsion; Radiofrequency amplifiers; Space technology;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 1999 IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-5604-7
DOI :
10.1109/RFIC.1999.805248
