High performance D-band (118 GHz) monolithic low noise amplifier

Author

Nishimoto, M. ; Sholley, M. ; Wang, H. ; Lai, R. ; Barsky, M. ; Streit, D. ; Chung, Y. ; Aust, M. ; Osgood, B. ; Raja, R. ; Gage, C. ; Gaier, T. ; Lee, K.

Author_Institution

Electron. Space & Technol. Div., TRW Inc., Redondo Beach, CA, USA

fYear

1999

fDate

1999

Firstpage

99

Lastpage

102

Abstract

This paper presents the results of 118 GHz amplifier designs with state of art low noise performance using 0.1-μm pseudomorphic InGaAs/InAlAs/InP HEMT technology. A single ended fixtured 118 GHz LNA demonstrated 3.8-4.5 dB NF with an associated gain of greater than 14.5 dB from 112.5 to 119.5 GHz. A on-wafer balanced LNA with gain of 12 dB, return loss of 9 dB from 110 to 130 GHz was also demonstrated

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; field effect MIMIC; gallium arsenide; indium compounds; millimetre wave amplifiers; 118 GHz; 12 dB; 14.5 dB; 9 dB; D-band monolithic LNA; InGaAs-InAlAs-InP; high performance; on-wafer balanced LNA; pseudomorphic InGaAs/InAlAs/InP HEMT; single ended fixtured; Circuit noise; Frequency; Gain measurement; HEMTs; Indium phosphide; Low-noise amplifiers; Noise measurement; Propulsion; Radiofrequency amplifiers; Space technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 1999 IEEE

Conference_Location

Anaheim, CA

ISSN

1097-2633

Print_ISBN

0-7803-5604-7

Type

conf

DOI

10.1109/RFIC.1999.805248

Filename

805248