A true enhancement mode device technology suitable for dual mode dual band power amplifier applications

Author

Glass, E. ; Huang, J. ; Martinez, M. ; Peatman, W. ; Hartin, O. ; Valentine, W. ; LaBelle, M. ; Costa, J. ; Johnson, K.

Author_Institution

Motorola Inc., Tempe, AZ, USA

fYear

1999

fDate

1999

Firstpage

135

Lastpage

138

Abstract

We have developed a true enhancement mode AlGaAs/InGaAs heterostructure insulated-gate FET technology that combines single supply operation with state-of-the-art linearity and efficiency performance for both digital and analog portable communications. The measured linearity and efficiency performance of this technology rivals or surpasses the results achieved by PHEMT and HBT devices reported to date. For the NADC modulation format at 1800 MHz and VDS=3.6 V, a power-added efficiency of 50% has been achieved at +30.6 dBm output power, -30 dBc adjacent channel power and -49 dBc alternate channel power

Keywords

MMIC power amplifiers; MOS analogue integrated circuits; UHF integrated circuits; UHF power amplifiers; aluminium compounds; field effect MMIC; gallium arsenide; indium compounds; mobile radio; 1800 MHz; 3.6 V; 50 percent; AlGaAs-InGaAs; III-V semiconductors; NADC modulation format; adjacent channel power; alternate channel power; dual mode dual band power amplifier; efficiency performance; enhancement mode device technology; heterostructure insulated-gate FET technology; linearity; output power; portable communications; power-added efficiency; single supply operation; Dual band; Gallium arsenide; Heterojunction bipolar transistors; Insulation; Leakage current; Linearity; Power amplifiers; Power generation; Switches; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 1999 IEEE

Conference_Location

Anaheim, CA

ISSN

1097-2633

Print_ISBN

0-7803-5604-7

Type

conf

DOI

10.1109/RFIC.1999.805255

Filename

805255