Title :
Advances in millimeter-wave FET MMIC technology
Author :
Matloubian, Mehran
Author_Institution :
HRL Labs., Malibu, CA, USA
Abstract :
There has been remarkable progress in the development of millimeter-wave FET MMICs over the last decade. Significant improvements in noise figure, gain, output power, and efficiency have been achieved at millimeter-wave frequencies. HEMT amplifiers with gain at frequencies as high as 200 GHz and fundamental HEMT oscillators at 213 GHz have been demonstrated. This paper will review recent developments of millimeter-wave FET MMICs as well as some remaining challenges
Keywords :
HEMT integrated circuits; MMIC amplifiers; MMIC oscillators; field effect MIMIC; integrated circuit noise; millimetre wave amplifiers; millimetre wave oscillators; 200 GHz; 213 GHz; HEMT amplifiers; efficiency; fundamental HEMT oscillators; gain; millimeter-wave FET MMIC; noise figure; output power; Field effect MMICs; Frequency; Gallium arsenide; HEMTs; Indium phosphide; Millimeter wave communication; Millimeter wave radar; Millimeter wave technology; Millimeter wave transistors; Noise figure;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 1999 IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-5604-7
DOI :
10.1109/RFIC.1999.805256
