Advances in millimeter-wave FET MMIC technology

Author

Matloubian, Mehran

Author_Institution

HRL Labs., Malibu, CA, USA

fYear

1999

fDate

1999

Firstpage

141

Lastpage

144

Abstract

There has been remarkable progress in the development of millimeter-wave FET MMICs over the last decade. Significant improvements in noise figure, gain, output power, and efficiency have been achieved at millimeter-wave frequencies. HEMT amplifiers with gain at frequencies as high as 200 GHz and fundamental HEMT oscillators at 213 GHz have been demonstrated. This paper will review recent developments of millimeter-wave FET MMICs as well as some remaining challenges

Keywords

HEMT integrated circuits; MMIC amplifiers; MMIC oscillators; field effect MIMIC; integrated circuit noise; millimetre wave amplifiers; millimetre wave oscillators; 200 GHz; 213 GHz; HEMT amplifiers; efficiency; fundamental HEMT oscillators; gain; millimeter-wave FET MMIC; noise figure; output power; Field effect MMICs; Frequency; Gallium arsenide; HEMTs; Indium phosphide; Millimeter wave communication; Millimeter wave radar; Millimeter wave technology; Millimeter wave transistors; Noise figure;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 1999 IEEE

Conference_Location

Anaheim, CA

ISSN

1097-2633

Print_ISBN

0-7803-5604-7

Type

conf

DOI

10.1109/RFIC.1999.805256

Filename

805256

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3323681