• DocumentCode
    3323865
  • Title

    A novel high-Q inductor based on Si 3D MMIC technology and its application

  • Author

    Kamogawa, Kenji ; Nishikawa, Kenjiro ; Tokumitsu, Tsuneo ; Tanaka, Masayoshi

  • Author_Institution
    NTT Network Innovation Labs., Kanagawa, Japan
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    185
  • Lastpage
    188
  • Abstract
    A novel high-Q spiral inductor, implemented on a conductive Si wafer by applying the 3D MMIC structure over it, is proposed. The proposed inductor effectively uses a 10 μm thick polyimide layers and ground plane with a window below the spiral. A Q-factor of 21.7 at 1.88 nH and 5.8 GHz is achieved. A 5 GHz-band LNA is also designed with the new inductors and Si BJT with fmax of 24 GHz, and the highest-class of performance was predicted with a 20 dB gain and a 2.5 dB noise figure
  • Keywords
    MMIC amplifiers; bipolar MMIC; elemental semiconductors; equivalent circuits; inductors; integrated circuit technology; polymer films; silicon; 10 micron; 2.5 dB; 20 dB; 24 GHz; 5 to 5.8 GHz; SHF LNA; Si; Si 3D MMIC technology; conductive Si wafer; high-Q inductor; polyimide layers; spiral inductor; Dielectric substrates; Digital integrated circuits; Gold; Inductors; MMICs; Microwave integrated circuits; Monolithic integrated circuits; Parasitic capacitance; Polyimides; Spirals;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radio Frequency Integrated Circuits (RFIC) Symposium, 1999 IEEE
  • Conference_Location
    Anaheim, CA
  • ISSN
    1097-2633
  • Print_ISBN
    0-7803-5604-7
  • Type

    conf

  • DOI
    10.1109/RFIC.1999.805267
  • Filename
    805267
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3323865