An S-band low-noise amplifier with self-adjusting bias for improved power consumption and dynamic range in a mobile environment

Author

Xiong, Wei ; Larson, Lawrence E.

Author_Institution

Qualcomm Inc., San Diego, CA, USA

fYear

1999

fDate

1999

Firstpage

193

Lastpage

196

Abstract

A discrete low-noise amplifier designed to operate in a mobile wireless environment is presented. The amplifier utilizes two cascaded GaAs FETs to achieve 25 dB gain and 0.9 dB noise figure at 2.5 GHz. An active bias control circuit automatically and continuously adjusts the drain-source currents of the FETs to maintain power consumption at 33 mW in nominal small-signal conditions, and to provide elevated input IP3 and reduced noise figure during jamming. A 15 dB improvement in input IP3 is achieved in large-signal operation

Keywords

UHF amplifiers; circuit noise; field effect transistor circuits; mobile radio; 0.9 dB; 2.5 GHz; 25 dB; 33 mW; GaAs; S-band LNA; active bias control circuit; cascaded GaAs FETs; dynamic range; input IP3; large-signal operation; low-noise amplifier; mobile radio environment; power consumption; self-adjusting bias; small-signal conditions; Dynamic range; Energy consumption; FETs; Jamming; Linearity; Low-noise amplifiers; Noise figure; Power amplifiers; Voltage; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 1999 IEEE

Conference_Location

Anaheim, CA

ISSN

1097-2633

Print_ISBN

0-7803-5604-7

Type

conf

DOI

10.1109/RFIC.1999.805269

Filename

805269