Title :
Design considerations of STCB OTA in CMOS 65nm with large capacitive loads
Author :
Kai Ho Mak ; Ho, Marco ; Ka Nang Leung ; Wang Ling Goh
Author_Institution :
Dept. of Electron. Eng., Chinese Univ. of Hong Kong, Hong Kong, China
Abstract :
A modified structure of OTA in CMOS 65-nm with signal- and transient-current boosting is presented in this paper. The structure uses simple cascode current mirrors to overcome channel-modulation effect of the 65-nm MOSFETs and to maintain low-error current matching. Simulations show that the parasitic poles of the OTA in CMOS 65-nm are located at very high frequencies and the achievable bandwidth is much increased with sufficient phase margin to maintain closed-loop stability.
Keywords :
CMOS analogue integrated circuits; circuit stability; current mirrors; operational amplifiers; CMOS integrated circuit; STCB OTA; cascode current mirrors; channel modulation effect; closed loop stability; large capacitive load; signal boosting; size 65 nm; transient current boosting; CMOS integrated circuits; CMOS technology; Gain; MOSFET; Mirrors; Power demand; Semiconductor device modeling; Amplifier; frequency compensation;
Conference_Titel :
Circuits and Systems (ISCAS), 2015 IEEE International Symposium on
Conference_Location :
Lisbon
DOI :
10.1109/ISCAS.2015.7169184
