DocumentCode :
332455
Title :
The effect of parasitic inductances in distributed amplifiers
Author :
Zólomy, A. ; Hilt, A. ; Járó, G. ; Berceli, T.
Author_Institution :
Tech. Univ. Budapest, Hungary
Volume :
2
fYear :
1998
fDate :
20-22 May 1998
Firstpage :
463
Abstract :
The gain-bandwidth relations of distributed amplifiers (DA) are analyzed If is shown that the amplifier performance is uniquely related to the properties of the active elements and the electrical length of the transmission lines between them. It is proved that the parasitic inductance of the connections between the embedding network and the transistors strongly distorts the gain characteristics. The paper proposes the so-called V-shape connection structure which overcomes the above mentioned disadvantages
Keywords :
MMIC amplifiers; distributed amplifiers; hybrid integrated circuits; inductance; integrated circuit interconnections; microwave integrated circuits; wideband amplifiers; V-shape connection structure; active element properties; amplifier performance; distributed amplifiers; electrical length; embedding network; gain characteristics distortion; gain-bandwidth relations; parasitic inductances; transistors; transmission lines; Admittance; Bandwidth; Circuits; Distributed amplifiers; Impedance; Parasitic capacitance; Performance analysis; Transfer functions; Transmission line theory; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwaves and Radar, 1998. MIKON '98., 12th International Conference on
Conference_Location :
Krakow
Print_ISBN :
83-906662-0-0
Type :
conf
DOI :
10.1109/MIKON.1998.740824
Filename :
740824
Link To Document :
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