Title :
Structural and Photoluminescence Properties of Ga2-2xIn2xO3 Films Prepared on Alpha-Al2O3 (0001) by MOCVD
Author :
Yang, Fan ; Ma, Jin ; Luan, Caina ; Kong, Lingyi ; Zhu, Zhen
Author_Institution :
Sch. of Phys., Shandong Univ., Jinan, China
Abstract :
Ga2-2xIn2xO3 films with different indium content x [In/(Ga+In) atomic ratio] have been prepared on α-Al2O3 (0001) substrates by the metalorganic chemical vapor deposition (MOCVD) method. The preparation, structural and photoluminescence (PL) properties of the Ga2-2xIn2xO3 films were investigated. The XRD analysis revealed that the film with high Ga content exhibited monoclinic structure of Ga2O3 and transformed to body-centered cubic (bcc) structure of In2O3 with increasing In content. UV PL peaks located at 333 nm (x<;0.5) and 338 nm (x≥0.5) for the Ga2-2xIn2xO3 films were observed at room temperature (RT) and the corresponding mechanisms were discussed.
Keywords :
MOCVD; X-ray diffraction; crystal structure; gallium compounds; photoluminescence; semiconductor growth; semiconductor thin films; solid-state phase transformations; wide band gap semiconductors; α-Al2O3 (0001) substrates; Al2O3; Ga2-2xIn2xO3; Ga2-2xIn2xO3 films; Ga2O3 monoclinic structure; In2O3 body-centered cubic structure; MOCVD; UV photoluminescence peaks; X-ray diffraction; XRD analysis; indium content; metalorganic chemical vapor deposition; photoluminescence properties; structural properties; temperature 293 K to 298 K; Diffraction; Films; MOCVD; Photonic band gap; Substrates; Temperature measurement; X-ray diffraction;
Conference_Titel :
Photonics and Optoelectronics (SOPO), 2011 Symposium on
Conference_Location :
Wuhan
Print_ISBN :
978-1-4244-6555-2
DOI :
10.1109/SOPO.2011.5780490
