DocumentCode :
3326032
Title :
Theoretical Study on Electronic Structure and Conductivity of Y-Doped ZnO
Author :
Chen, Lanli ; Xiong, Zhihua
Author_Institution :
Key Lab. for Optoelectron. & Commun. of Jiangxi Province, Jiangxi Sci. & Technol. Normal Univ., Nanchang, China
fYear :
2011
fDate :
16-18 May 2011
Firstpage :
1
Lastpage :
4
Abstract :
Based on the first principles calculations, using density functional theory within the generalized gradient approximation, we perform a study on Y-doped ZnO, where the total density of states (TDOS), the partial density of states (PDOS) and band structure and conductivity of the systems are included. The calculated results show that with the increase of concentration of Y, the lattice parameter is expanded. Moreover, from the PDOS, we can see that the valence band maximum is determined by the O-p states and the conduction band minimum is depended on the Y-s and Zn-s states. Simultaneously, it is found that as the increase of concentration of Y, the band gap of dopant system is broadening. Its reason is that the valence band moving towards into the lower energy is more than the conduction band. In addition, we calculated the number of the electrons which go into the conduction band. We found that as the increase of doping concentration, the number of the electrons decrease. The conductivity of the system is enhanced with the increase of Y concentration. Therefore, it can be concluded that the low concentration of Y doping ZnO demonstrates the better conductivity.
Keywords :
II-VI semiconductors; ab initio calculations; conduction bands; density functional theory; doping profiles; electrical conductivity; electronic density of states; energy gap; gradient methods; lattice constants; semiconductor doping; valence bands; wide band gap semiconductors; yttrium; zinc compounds; O-p states; ZnO:Y; band gap; band structure; conduction band; conductivity; density functional theory; doping concentration; electronic structure; first principles calculations; generalized gradient approximation; lattice parameter; partial density of states; total density of states; valence band; Conductivity; Doping; Lattices; Optical films; Photonic band gap; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics and Optoelectronics (SOPO), 2011 Symposium on
Conference_Location :
Wuhan
ISSN :
2156-8464
Print_ISBN :
978-1-4244-6555-2
Type :
conf
DOI :
10.1109/SOPO.2011.5780493
Filename :
5780493
Link To Document :
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