Title :
Preparation of GaN Powder by Sol-Gel and the Theoretical Calculation
Author :
Zhang, Lu ; Wang, Xuewen
Author_Institution :
Coll. of Inf. Sci. & Technol., Northwest Univ., Xi´´an, China
Abstract :
In this paper, the sol-gel method is used to prepare the nano GaN powder. In which we use Ga2O3 as the gallium source, citric acid as the chelating agent to prepare the former drive material, after to be jello, we put it into NH3 environment to get the GaN sample. The two photoluminescence peaks by PL show that GaN has good optical performance, through the first principle calculation we know that the optical performance parameters fit well with the experimental value.
Keywords :
III-V semiconductors; ab initio calculations; absorption coefficients; band structure; density functional theory; dielectric function; electronic density of states; gallium compounds; lanthanum; nanofabrication; nanoparticles; photoluminescence; pseudopotential methods; semiconductor doping; semiconductor growth; sol-gel processing; wide band gap semiconductors; GaN:La; absorption coefficient; band structure; chelating agent; citric acid; density functional theory; density of states; dielectric function; doping; first principle calculation; jello; nanopowder; photoluminescence; pseudo potential method; sol-gel method; Absorption; Dielectrics; Gallium nitride; Optical imaging; Optical polarization; Optical reflection; Powders;
Conference_Titel :
Photonics and Optoelectronics (SOPO), 2011 Symposium on
Conference_Location :
Wuhan
Print_ISBN :
978-1-4244-6555-2
DOI :
10.1109/SOPO.2011.5780494
