DocumentCode
332611
Title
A high speed IDDQ sensor for low-voltage ICs
Author
Hashizume, Masaki ; Miura, Yukiya ; Ichimiya, Masahiro ; Tamesada, Takeomi ; Kinoshita, Kozo
Author_Institution
Tokushima Univ., Japan
fYear
1998
fDate
2-4 Dec 1998
Firstpage
327
Lastpage
331
Abstract
A new high speed Built-In Current (BIC) sensor is proposed, which is applicable for IDDQ tests of low power ICs. The layout of the sensor is designed with CMOS 1.2 μm technology. By using this sensor, resistive bridging faults in a circuit, whose supply voltage is 3.3 V, can be detected at the test speed of 66.7 MHz
Keywords
CMOS digital integrated circuits; electric current measurement; electric sensing devices; integrated circuit layout; integrated circuit testing; low-power electronics; 1.2 micron; 3.3 V; 66.7 MHz; CMOS technology; built-in current sensor; high speed IDDQ sensor; low power ICs; low-voltage ICs; resistive bridging faults; sensor layout; CMOS logic circuits; CMOS technology; Circuit faults; Circuit testing; Current measurement; Current supplies; Electrical fault detection; Integrated circuit testing; Logic testing; Low voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Test Symposium, 1998. ATS '98. Proceedings. Seventh Asian
ISSN
1081-7735
Print_ISBN
0-8186-8277-9
Type
conf
DOI
10.1109/ATS.1998.741634
Filename
741634
Link To Document