DocumentCode :
332622
Title :
Effects of ion implantation and thermal annealing on the photoluminescence in amorphous silicon nitride films
Author :
Seol, K.S. ; Futami, T. ; Watanabe, T. ; Ohki, Y. ; Takiyama, M.
Author_Institution :
Dept. of Electr., Electron. & Comput. Eng., Waseda Univ., Tokyo, Japan
fYear :
1998
fDate :
27-30 Sep 1998
Firstpage :
127
Lastpage :
130
Abstract :
We have investigated the effects of implantation and thermal annealing upon the photoluminescence observed in a-Si3N4 films prepared by the low-pressure chemical vapor deposition (LPCVD) method, in order to explore the correlation between the PL and the defects induced by ion-implantation and thermal annealing
Keywords :
CVD coatings; Fourier transform spectra; annealing; dielectric thin films; infrared spectra; ion implantation; noncrystalline defects; photoluminescence; silicon compounds; LPCVD; Si3N4; amorphous films; defects; ion implantation; photoluminescence; thermal annealing; Amorphous silicon; Dielectrics and electrical insulation; Electron optics; Energy measurement; Ion implantation; Optical films; Photoluminescence; Pulse measurements; Rapid thermal annealing; Semiconductor films;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Insulating Materials, 1998. Proceedings of 1998 International Symposium on
Conference_Location :
Toyohashi
Print_ISBN :
4-88686-050-8
Type :
conf
DOI :
10.1109/ISEIM.1998.741702
Filename :
741702
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=332622
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