• DocumentCode
    3326258
  • Title

    Study of gas sensor with carbon nanotube film on the substrate of porous silicon

  • Author

    Zhang, Yong ; Liu, Junhua ; Li, Xin ; Dou, Juying ; Liu, Weihua ; He, Yongning ; Zhu, Changchun

  • Author_Institution
    Dept. of Autom., Xi´´an Jiaotong: Univ., China
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    13
  • Lastpage
    14
  • Abstract
    A new method of obtaining extremely high electric fields in a very small region near the tip of a carbon nanotube, with diameter of nanometer order, is studied. This method makes the self-sustaining dark discharge voltage decrease to less than 220 V, which is in the safe range. The carbon nanotube array film is used as a cathode to form a new kind of gas sensor based on the gas discharge. The discharge current at room temperature and atmospheric pressure increases from the order of nanoamperes to that of microamperes. The electrical characteristics of several gases at atmospheric pressure are studied. The self-sustaining dark discharge voltages of different gases vary, as do the discharge currents. Porous silicon is selected as the substrate for the carbon nanotubes. This can improve the adhesion of the nanotube on the substrate and so prolong the lifetime of the cathode
  • Keywords
    carbon nanotubes; cathodes; discharges (electric); elemental semiconductors; gas sensors; porous semiconductors; silicon; vacuum microelectronics; 220 V; C nanotube array film; C-Si; Si; adhesion; atmospheric pressure; carbon nanotube film; cathode; discharge current; electric conductance; extremely high electric fields; gas concentration; gas sensor; nanometer order diameter; porous silicon substrate; room temperature; self-sustaining dark discharge voltage; Carbon nanotubes; Cathodes; Discharges; Electric variables; Gas detectors; Gases; Sensor arrays; Substrates; Temperature sensors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International
  • Conference_Location
    Davis, CA
  • Print_ISBN
    0-7803-7197-6
  • Type

    conf

  • DOI
    10.1109/IVMC.2001.939629
  • Filename
    939629