A new method of internal micrographic visualization of IC and vacuum microelectronic devices by crossing the surface

Author

Xiao, Ling ; Liang, Zhugouan ; Li, Yawen ; Wang, Jian ; Zhou, Kailin ; Li, Ping ; Xu, Xiaohua ; Rau, E.I. ; Hu, Wenguo

Author_Institution

Dept. of Phys., Yunnan Univ., Kunming, China

fYear

2001

fDate

2001

Firstpage

17

Lastpage

18

Abstract

A novel nondestructive and contactless method has been developed in our laboratory to obtain the internal micrograph that crosses the surface insulation layer of ICs and vacuum microelectronic devices. The method of internal micrographic visualisation by crossing the surface insulation layer (MIMVCS) can be used to nondestructively obtain microstructure information (such as inhomogeneities or material defects) of ICs and vacuum microelectronic devices below the insulation layers. Based upon the principle of the MIMVCS, we have successfully devised a detector that can image the subsurface topography of ICs and vacuum microelectronic devices below the insulation layer. The detector of internal micrographic visualization by crossing the surface (DIMVCS) can be added as an attachment to an SEM

Keywords

electron tube testing; integrated circuit testing; nondestructive testing; scanning electron microscopy; vacuum microelectronics; DIMVCS; IC; MIMVCS; inhomogeneities; internal micrographic visualization; material defects; microstructure information; nondestructive contactless method; subsurface topography imaging; surface crossing; surface insulation layer; vacuum microelectronic devices; Application specific integrated circuits; Detectors; Electrons; Insulation; Microelectronics; Physics; Protection; Silicon; Testing; Visualization;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International

Conference_Location

Davis, CA

Print_ISBN

0-7803-7197-6

Type

conf

DOI

10.1109/IVMC.2001.939631

Filename

939631