Title :
CMOS compatible edge coupled capacitive MEMS switch for RF applications
Author :
Zhang, Shumin ; Su, Wansheng ; Zaghloul, Mona E.
Author_Institution :
Hughes Commun., Germantown, MD
Abstract :
This paper presents the design, simulation and fabrication of a CMOS process compatible capacitive MEMS switch. The MEMS switch uses thermal actuation and finger structures for capacitive coupling. The design is fabricated using commercial 0.6 um CMOS process and post-processed using mask-less RIE process. Results show that the insertion loss is 0.7 dB at 2 GHz and the isolation is 30 dB at 2 GHz. The actuation voltage is 1.5v. The switch demonstrates high isolation and low insertion loss, it well fits for RF applications like configurable voltage control oscillators and configurable matching networks.
Keywords :
CMOS integrated circuits; UHF integrated circuits; micromechanical devices; voltage-controlled oscillators; CMOS process; RF applications; capacitive coupling; compatible capacitive MEMS switch; configurable matching networks; frequency 2 GHz; loss 0.7 dB; loss 30 dB; size 0.6 mum; thermal actuation; voltage 1.5 V; voltage control oscillators; CMOS process; Dielectric substrates; Fabrication; Fingers; Insertion loss; Microswitches; Radio frequency; Radiofrequency microelectromechanical systems; Switches; Thermal stresses; CMOS; MEMS Switch;
Conference_Titel :
Microelectronics, 2007. ICM 2007. Internatonal Conference on
Conference_Location :
Cairo
Print_ISBN :
978-1-4244-1846-6
Electronic_ISBN :
978-1-4244-1847-3
DOI :
10.1109/ICM.2007.4497691
