Noise cancellation techniques in multi-standard low noise amplifiers

This paper presents two approaches to improve the performance of RF low noise amplifiers (LNAs). One approach is for noise enhancement and the other is for improving flatness of very wide range LNA. The techniques described here are based mainly on making some enhancement on capacitive cross-coupled LNA technique. LNAs have been designed in 130 nm CMOS process with 1.2 V power supply. Enhanced noise figure LNA achieved a minimum noise figure of 2.2 dB (taking into account the load thermal noise) with 2.4 mW power consumption in LNA core only and a 4.5 GHz bandwidth (1.5 GHZ-6 GHz). Enhanced wideband LNA achieved a constant noise figure of 4.3 dB over the frequency range from 0.5 GHz to 15 GHz with 4.2 mW power consumption in LNA core only. Moreover, these same two approaches were applied to mixer circuits by simply adding a switching stage after the LNA.