DocumentCode :
3326597
Title :
Transport-limited emission from carbon nanotubes
Author :
Shaw, J.L. ; Hsu, D.S.Y.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
fYear :
2001
fDate :
2001
Firstpage :
45
Lastpage :
46
Abstract :
We have recently demonstrated emission from arrays of gated multiwall carbon nanotubes on silicon substrates. In addition to fabrication development, these structures are useful for study of the carbon nanotube emission properties. To that end, we have measured the effect of emission current, temperature, and gas environments on the energy distributions. We find that the emission near the Fermi level saturates at high currents, but the effect is reduced at elevated temperature. Because the emission threshold does not change, we believe the low electron density near EF causes the saturation
Keywords :
Fermi level; carbon nanotubes; electron field emission; C; Fermi level; Si; carbon nanotubes; electron density; energy distribution; fabrication; gas environment; gated multiwall carbon nanotube array; silicon substrate; temperature dependence; transport-limited emission; Carbon nanotubes; Contacts; Current measurement; Electron emission; Energy measurement; Fabrication; Laboratories; Silicon; Temperature distribution; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International
Conference_Location :
Davis, CA
Print_ISBN :
0-7803-7197-6
Type :
conf
DOI :
10.1109/IVMC.2001.939645
Filename :
939645
Link To Document :
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