DocumentCode
3326600
Title
A 1.75 GHz CMOS Class E RF Power Amplifier and oscillator
Author
Ameen, Ayman O. ; Sharaf, Khaled M.
fYear
2007
fDate
29-31 Dec. 2007
Firstpage
235
Lastpage
238
Abstract
In this work, the design of a CMOS Class E Power Amplifier is presented, integrated in 0.13-mum CMOS technology, the amplifier achieves a power added efficiency of 44.8% at output power of 21.2 dBm. Based on this design, two applications are introduced: First, polar modulation through the supply voltage is considered, and then high efficiency power generation through class E oscillators is discussed.
Keywords
CMOS integrated circuits; UHF amplifiers; UHF oscillators; power amplifiers; CMOS class E RF power amplifier; CMOS class E RF power oscillator; efficiency 44.8 percent; frequency 1.75 GHz; high efficiency power generation; polar modulation; size 0.13 mum; supply voltage; CMOS technology; High power amplifiers; Injection-locked oscillators; Phase modulation; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Switches; Zero voltage switching; Class E; Injection locking; Polar Modulation; Power Oscillator; Two-Tone Test;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2007. ICM 2007. Internatonal Conference on
Conference_Location
Cairo
Print_ISBN
978-1-4244-1846-6
Electronic_ISBN
978-1-4244-1847-3
Type
conf
DOI
10.1109/ICM.2007.4497701
Filename
4497701
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